| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N5116 | P-Channel silicon junction field-effect transistor | distributor | - | 3 | - | - | 64 K |
| 2N5179 | NPN silicon RF small signal transistor | distributor | - | 3 | -65°C | 200°C | 117 K |
| IFN5114 | P-Channel silicon junction field-effect transistor | distributor | - | 3 | - | - | 66 K |
| IFN5115 | P-Channel silicon junction field-effect transistor | distributor | - | 3 | - | - | 66 K |
| IFN5116 | P-Channel silicon junction field-effect transistor | distributor | - | 3 | - | - | 66 K |
| MSGN51W | 5V, 100mW ultra high brightness red/green dual color lamp | distributor | - | 2 | -55°C | 100°C | 45 K |
| PN5130 | NPN silicon RF small signal transistor | distributor | - | 3 | -55°C | 150°C | 231 K |
| PN5132 | NPN silicon RF small signal transistor | distributor | - | 3 | -55°C | 150°C | 231 K |
| TC54VN5101ECBTR | Voltage detector, Nch output, 5.1V, +/-1% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
| TC54VN5101EMBTR | Voltage detector, Nch open drain, 5.1V, +/-1% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
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