| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5257B | 500 milliwatts glass silicon zener diode, zener voltage 33V | Motorola | - | 2 | -65°C | 200°C | 424 K |
| 2N5210 | Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 45 K |
| 2N5294 | Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. | distributor | - | 3 | -65°C | 150°C | 46 K |
| 2N5296 | Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. | distributor | - | 3 | -65°C | 150°C | 46 K |
| TC54VN5201ECB | Voltage detector. Detected voltage 5.2V. Output form: Nch open drain. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC54VN5201EMB | Voltage detector. Detected voltage 5.2V. Output form: Nch open drain. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC54VN5201EZB | Voltage detector. Detected voltage 5.2V. Output form: Nch open drain. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC54VN5202ECB | Voltage detector. Detected voltage 5.2V. Output form: Nch open drain. Tolerance +-2.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC54VN5202EMB | Voltage detector. Detected voltage 5.2V. Output form: Nch open drain. Tolerance +-2.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC54VN5202EZB | Voltage detector. Detected voltage 5.2V. Output form: Nch open drain . Tolerance +-2.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
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