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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
1N5391Silicon rectifier. VRRM = 50V. VRMS = 35V. VDC = 50V. Current 1.5Adistributor-2-65°C175°C22 K
1N5392Silicon rectifier. VRRM = 100V. VRMS = 70V. VDC = 100V. Current 1.5Adistributor-2-65°C175°C22 K
1N5393Silicon rectifier. VRRM = 200V. VRMS = 140V. VDC = 200V. Current 1.5Adistributor-2-65°C175°C22 K
1N5394Silicon rectifier. VRRM = 300V. VRMS = 210V. VDC = 300V. Current 1.5Adistributor-2-65°C175°C22 K
1N5395Silicon rectifier. VRRM = 400V. VRMS = 280V. VDC = 400V. Current 1.5Adistributor-2-65°C175°C22 K
1N5395Silicon rectifier. VRRM = 400V. VRMS = 280V. VDC = 400V. Current 1.5Adistributor-2-65°C175°C22 K
1N5398Silicon rectifier. Max reccurrent peak reverse voltage 800V. Max RMS voltage 560V. Max DC blocking voltage 800V. Current 1.5AWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-2-65°C175°C534 K
1N5399Silicon rectifier. Max recurrent peak reverse voltage 1000V. Max RMS voltage 700V. Max DC blocking voltage 1000V. Current 1.5AWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-2-65°C175°C534 K
2N5397N-Channel silicon junction field-effect transistordistributor-4--91 K
2N5398N-Channel silicon junction field-effect transistordistributor-4--91 K
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