| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5402G | 200V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | distributor | - | 2 | -65°C | 150°C | 59 K |
| 1N5402GP | 3.0A, 200V ultra fast recovery rectifier | distributor | - | - | - | - | 78 K |
| 1N5403G | 300V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | distributor | - | 2 | -65°C | 150°C | 59 K |
| 1N5404G | 400V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | distributor | - | 2 | -65°C | 150°C | 59 K |
| 1N5404GP | 3.0A, 400V ultra fast recovery rectifier | distributor | - | - | - | - | 78 K |
| 1N5405G | 500V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | distributor | - | 2 | -65°C | 150°C | 59 K |
| 1N5406G | 600V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | distributor | - | 2 | -65°C | 150°C | 59 K |
| 1N5407G | 700V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | distributor | - | 2 | -65°C | 150°C | 59 K |
| 1N5408G | 800V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | distributor | - | 2 | -65°C | 150°C | 59 K |
| H2N5401 | 600mA PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltage | distributor | - | 3 | - | - | 38 K |
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