| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5404G | 3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 400 V, max RMS voltage 280 V, max D. C blocking voltage 400 V. | distributor | - | 2 | -65°C | 150°C | 128 K |
| 1N5406G | 3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 600 V, max RMS voltage 420 V, max D. C blocking voltage 600 V. | distributor | - | 2 | -65°C | 150°C | 128 K |
| 1N5407G | 3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 800 V, max RMS voltage 560 V, max D. C blocking voltage 800 V. | distributor | - | 2 | -65°C | 150°C | 128 K |
| 1N5408G | 3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 1000 V, max RMS voltage 700 V, max D. C blocking voltage 1000 V. | distributor | - | 2 | -65°C | 150°C | 128 K |
| IN5400 | 3.0 A, silicon rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V. | distributor | - | 2 | -65°C | 125°C | 139 K |
| IN5401 | 3.0 A, silicon rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V. | distributor | - | 2 | -65°C | 125°C | 139 K |
| IN5402 | 3.0 A, silicon rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V. | distributor | - | 2 | -65°C | 125°C | 139 K |
| IN5404 | 3.0 A, silicon rectifier. Max recurrent peak reverse voltage 400 V, max RMS voltage 280 V, max D. C blocking voltage 400 V. | distributor | - | 2 | -65°C | 125°C | 139 K |
| IN5406 | 3.0 A, silicon rectifier. Max recurrent peak reverse voltage 600 V, max RMS voltage 420 V, max D. C blocking voltage 600 V. | distributor | - | 2 | -65°C | 125°C | 139 K |
| IN5407 | 3.0 A, silicon rectifier. Max recurrent peak reverse voltage 800 V, max RMS voltage 560 V, max D. C blocking voltage 800 V. | distributor | - | 2 | -65°C | 125°C | 139 K |
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