Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N5400 | 50 V, 3.0 A silicon rectifier | distributor | DO | 2 | -65°C | 125°C | 121 K |
1N5401 | 100 V, 3.0 A silicon rectifier | distributor | DO | 2 | -65°C | 125°C | 121 K |
1N5402 | 200 V, 3.0 A silicon rectifier | distributor | DO | 2 | -65°C | 125°C | 121 K |
1N5404 | 400 V, 3.0 A silicon rectifier | distributor | DO | 2 | -65°C | 125°C | 121 K |
1N5406 | 600 V, 3.0 A silicon rectifier | distributor | DO | 2 | -65°C | 125°C | 121 K |
1N5407 | 800 V, 3.0 A silicon rectifier | distributor | DO | 2 | -65°C | 125°C | 121 K |
1N5408 | 1000 V, 3.0 A silicon rectifier | distributor | DO | 2 | -65°C | 125°C | 121 K |
HN/2N5401 | 150 V, PNP silicon expitaxial planar transistor | distributor | - | 3 | - | - | 124 K |
PJ2N5401CT | 130V; 600mA PNP epitaxial silicon transistor | distributor | - | 3 | -20°C | 85°C | 191 K |
SN5408W | Quadruple 2-input positive-AND gates | Texas-Instruments | W | 14 | -55°C | 125°C | 204 K |
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