Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
1N5400 | 50V; 3.0A rectifier; high current capability and low forward voltage drop | distributor | - | 2 | -65°C | 175°C | 62 K |
1N5400 | 50 V, 3 A, plastic silicon rectifier | distributor | DO | 2 | -65°C | 175°C | 126 K |
1N5400 | 50 V, 3 A silicon rectifier | distributor | DO | 2 | -50°C | 170°C | 81 K |
1N5400 | 50 V, 3 A general diode | distributor | DO | 2 | - | - | 49 K |
1N5400 | 3.0A, 50V ultra fast recovery rectifier | distributor | - | - | - | - | 78 K |
1N5400 | 50 V, 3 A, high current plastic silicon rectifier | distributor | DO | 2 | -55°C | 150°C | 155 K |
1N5400G | 50V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | distributor | - | 2 | -65°C | 150°C | 59 K |
1N5400G | 50 V, 3 A, general purpose GPP diode | distributor | DO | 2 | - | - | 50 K |
1N5400G | Glass passivated junction rerctifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 3.0 A. | distributor | - | 2 | -65°C | 150°C | 16 K |
HN/2N5400 | 120 V, PNP silicon expitaxial planar transistor | distributor | - | 3 | - | - | 124 K |
[1] [2] [3] [4] 5 [6] |
---|