| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5551 | Glass Passivated Junction Rectifier | General-Semiconductor | G4 | - | - | - | 53 K |
| 1N5551 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | B_(WT) | - | - | - | 78 K |
| 1N5551 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | E | - | - | - | 46 K |
| 1N5551 | 400 V rectifier 5.0 A forward current, 2000 ns recovery time | distributor | - | 2 | -65°C | 175°C | 101 K |
| 1N5551US | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | B_MELF(WT) | - | - | - | 78 K |
| 2N5551 | 150 V, NPN epitaxial planar selicon high voltage transistor | distributor | - | 3 | -55°C | 150°C | 57 K |
| 2N5551 | 1W NPN complementary silicon general purpose high voltage transistor | distributor | - | 3 | -55°C | 150°C | 165 K |
| 2N5551 | Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 75 K |
| H2N5551 | 600mA NPN epitaxial planar transistor | distributor | - | 3 | - | - | 37 K |
| [1] 2 [3] |
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