| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5623US | Fast Rectifier (100-500ns) | Microsemi-Corporation | - | - | - | - | 51 K |
| 2N5664SMD | 200V Vce, 3A Ic, 20MHz NPN bipolar transistor | Semelab-Plc- | SMD1 | - | - | - | 17 K |
| 2N5671 | 90V High power NPN silicon power transistor | distributor | - | 2 | -65°C | 200°C | 125 K |
| 2N5672 | 120V High power NPN silicon power transistor | distributor | - | 2 | -65°C | 200°C | 125 K |
| 2N5679 | 100V Vce, 1A Ic, 30MHz PNP bipolar transistor | Semelab-Plc- | TO39 | - | - | - | 20 K |
| 2N5680 | 120V Vce, 1A Ic, 30MHz PNP bipolar transistor | Semelab-Plc- | TO39 | - | - | - | 20 K |
| 2N5681 | 100V Vce, 1A Ic, 30MHz NPN bipolar transistor | Semelab-Plc- | TO39 | - | - | - | 22 K |
| 2N5681SMD | 100V Vce, 1A Ic, 30MHz NPN bipolar transistor | Semelab-Plc- | SMD1 | - | - | - | 22 K |
| 2N5685 | 60V High-current complementary silicon power transistor | distributor | - | 2 | -65°C | 200°C | 185 K |
| PRN10116N56R0J | Bussed resistor network | California-Micro-Devices | SOIC | 16 | 0°C | 70°C | 51 K |
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