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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
1N5624GP200 V, 3 A glass passivated junction rectifierdistributor-2-65°C175°C34 K
1N5625GP400 V, 3 A glass passivated junction rectifierdistributor-2-65°C175°C34 K
1N5626GP600 V, 3 A glass passivated junction rectifierdistributor-2-65°C175°C34 K
1N5627GP800 V, 3 A glass passivated junction rectifierdistributor-2-65°C175°C34 K
1N5681Capacitance:6.8pF; 400mW; measured from 1000-3000Hz; genral purpose abrupt varactor diodedistributor---65°C175°C37 K
1N5682Capacitance:8.2pF; 400mW; measured from 1000-3000Hz; genral purpose abrupt varactor diodedistributor---65°C175°C37 K
1N5683Capacitance:10.0pF; 400mW; measured from 1000-3000Hz; genral purpose abrupt varactor diodedistributor---65°C175°C37 K
1N5684Capacitance:12.0pF; 400mW; measured from 1000-3000Hz; genral purpose abrupt varactor diodedistributor---65°C175°C37 K
1N5685Capacitance:15.0pF; 400mW; measured from 1000-3000Hz; genral purpose abrupt varactor diodedistributor---65°C175°C37 K
2N5631NPN transistor for use high power audio amplifier, 140V, 16AON-Semiconductor-3-65°C200°C118 K
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