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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2N5879Complementary silicon high-power transistordistributor-2-65°C200°C180 K
2N5880Complementary silicon high-power transistordistributor-2-65°C200°C180 K
2N5881Complementary silicon high-power transistordistributor-2-65°C200°C180 K
2N5882Complementary silicon high-power transistordistributor-2-65°C200°C180 K
2N5883Complementary silicon high-power transistordistributor-2-65°C200°C183 K
2N5884Complementary silicon high-power transistordistributor-2-65°C200°C183 K
2N5885Complementary silicon high-power transistordistributor-2-65°C200°C183 K
2N5886Complementary silicon high-power transistordistributor-2-65°C200°C183 K
R1110N581ATRLow noise 150mA L.D.O. regulator. Output voltage 5.8V. "L" active type. Standard taping specification TR.distributor-5-40°C85°C177 K
R1110N581BTRLow noise 150mA L.D.O. regulator. Output voltage 5.8V. "H" active type. Standard taping specification TR.distributor-5-40°C85°C177 K
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