| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5817 | Schottky barrier rectifier. VRRM = 20V. VRMS = 14V. VDC = 20V. Current 1.0A | distributor | - | 2 | -65°C | 125°C | 23 K |
| 1N5818 | Schottky barrier rectifier. VRRM = 30V. VRMS = 21V. VDC = 30V. Current 1.0A | distributor | - | 2 | -65°C | 125°C | 23 K |
| 1N5819 | 40 volt (working peak reverse voltage), 1 AMP schottky barrier rectifier | distributor | - | 2 | -55°C | 175°C | 37 K |
| 1N5820US | 20 volt (working peak reverse voltage), 3 AMP schottky barrier rectifier | distributor | - | - | -65°C | 175°C | 39 K |
| 1N5821US | 30 volt (working peak reverse voltage), 3 AMP schottky barrier rectifier | distributor | - | - | -65°C | 175°C | 39 K |
| 1N5822US | 40 volt (working peak reverse voltage), 3 AMP schottky barrier rectifier | distributor | - | - | -65°C | 175°C | 39 K |
| 2N5883 | 60 V, complementary PNP selicon high-power transistor | distributor | - | 2 | -65°C | 200°C | 190 K |
| 2N5884 | 80 V, complementary PNP selicon high-power transistor | distributor | - | 2 | -65°C | 200°C | 190 K |
| 2N5885 | 60 V, complementary NPN selicon high-power transistor | distributor | - | 2 | -65°C | 200°C | 190 K |
| 2N5886 | 80 V, complementary NPN selicon high-power transistor | distributor | - | 2 | -65°C | 200°C | 190 K |
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