| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MGP11N60E | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 123 K |
| MGP14N60E | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 125 K |
| MGP15N60U | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 120 K |
| MGP20N60U | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 120 K |
| MGS05N60D | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 135 K |
| MTP1N60E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 232 K |
| MTP2N60E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 219 K |
| MTP3N60E | TMOS E-FET high energy power FET | Motorola | - | 4 | -55°C | 150°C | 183 K |
| MTP6N60E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 156 K |
| MTY25N60E | TMOS E-FET power field effect transistor | Motorola | - | 3 | -55°C | 150°C | 236 K |
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