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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2N6040Darlington complementary silicon power transistordistributor-3-65°C150°C199 K
2N6041Darlington complementary silicon power transistordistributor-3-65°C150°C199 K
2N6043Darlington complementary silicon power transistordistributor-3-65°C150°C199 K
2N6044Darlington complementary silicon power transistordistributor-3-65°C150°C199 K
2N6045Darlington complementary silicon power transistordistributor-3-65°C150°C199 K
MTB2N60ETMOS E-FET high energy power FETMotorolaDPAK4-55°C150°C271 K
MTB3N60ETMOS E-FET high energy power FET D2PAK for surface mountMotorolaDPAK4-55°C150°C74 K
MTB6N60ETMOS E-FET high energy power FET D2PAK for surface mountMotorolaDPAK4-55°C150°C192 K
MTB6N60E1TMOS E-FET high energy power FET D2PAK for surface mountMotorolaDPAK4-55°C150°C160 K
MTD1N60ETMOS E-FET power field effect transistor D2PAK for surface mountMotorolaDPAK4-55°C150°C266 K
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