| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N6057 | 60 V, darlington complementary NPN selicon power transistor | distributor | - | 2 | -65°C | 200°C | 195 K |
| AIC1680N60CU | Ultra low power voltage detector | distributor | - | 3 | -30°C | 80°C | 291 K |
| AIC1680N60CV | Ultra low power voltage detector | distributor | - | 8 | -30°C | 80°C | 291 K |
| AIC1680N60CX | Ultra low power voltage detector | distributor | - | 3 | -30°C | 80°C | 291 K |
| AIC1680N60CZ | Ultra low power voltage detector | distributor | - | 3 | -30°C | 80°C | 291 K |
| IRFB9N60A | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 9.2A | International-Rectifier | - | 3 | -55°C | 150°C | 135 K |
| IRFIB6N60A | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 5.5 A | International-Rectifier | - | 3 | -55°C | 150°C | 149 K |
| IRFP27N60K | HEXFET power MOSFET. VDSS = 600 V, RDS(on) = 180 mOhm, ID = 27 A | International-Rectifier | - | 3 | -55°C | 150°C | 91 K |
| IXSH30N60U1 | 600V high speed IGBT with diode | distributor | - | 3 | -55°C | 150°C | 82 K |
| OM11N60SA | 600V, 11 Amp, N-channel MOSFET | distributor | - | 3 | -55°C | 150°C | 29 K |
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