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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2N6034PNP medium power darlington transistor, 4A , 40VSGS-Thomson-Microelectronics-3-65°C150°C174 K
2N6035PNP medium power darlington transistor, 4A , 60VSGS-Thomson-Microelectronics-3-65°C150°C174 K
2N6036PNP medium power darlington transistor, 4A , 80VSGS-Thomson-Microelectronics-3-65°C150°C174 K
2N6037NPN medium power darlington transistor, 4A , 40VSGS-Thomson-Microelectronics-3-65°C150°C174 K
2N6038NPN medium power darlington transistor, 4A , 60VSGS-Thomson-Microelectronics-3-65°C150°C174 K
2N6039NPN medium power darlington transistor, 4A , 80VSGS-Thomson-Microelectronics-3-65°C150°C174 K
MI-N60-XXInputV:270V; outputV:5V; 300W; single output DC-DC converter provide power system designers with cost-effective, high performance, off-the-shelf solutionsdistributorChassis mount packag---134 K
SSS7N60AN-channel power MOSFET, 600V, 4ASamsung-Electronic-3-55°C150°C320 K
VI-N60-XXInputV:300V; outputV:5V; 300-600W; 60-120A; single, dual and triple output DC-DC converter to applications that might otherwise require a custom supplydistributor----154 K
VI-N60-XXInputV:300V; outputV:5V; 300-600W; 60-120A; single, dual and triple output DC-DC converter to applications that might otherwise require a custom supplydistributor----154 K
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