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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2N6107PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W.distributor-3-65°C150°C47 K
2N6190Chip: geometry 9700; polarity PNPdistributor----31 K
2N6191Chip: geometry 9700; polarity PNPdistributor----31 K
CN610816A800V, 160A general purpose common anode diodedistributor----101 K
CN611216A1200V, 160A general purpose common anode diodedistributor----101 K
CN611416A1400V, 160A general purpose common anode diodedistributor----101 K
CN611616A1600V, 160A general purpose common anode diodedistributor----101 K
TC54VN6102ECTTRVoltage detector, Nch open drain, 6.1V, +/-2%Microchip-Technology-Inc--5-40°C85°C215 K
TYN61212A SCRs, 600V, sensitivity 30mASGS-Thomson-Microelectronics-3-40°C125°C113 K
TYN612T12A SCRs, 600V, sensitivity 15mASGS-Thomson-Microelectronics-3-40°C125°C113 K
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