| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N6107 | PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| CN610816A | 800V, 160A general purpose common anode diode | distributor | - | - | - | - | 101 K |
| TC54VN6102ECBTR | Voltage detector, Nch output, 6.1V, +/-2% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
| TC54VN6102ECTTR | Voltage detector, Nch open drain, 6.1V, +/-2% | Microchip-Technology-Inc- | - | 5 | -40°C | 85°C | 215 K |
| TC54VN6102EMBTR | Voltage detector, Nch open drain, 6.1V, +/-2% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
| TYN610 | Thyristors, 10A, 600V up to 400Hz | SGS-Thomson-Microelectronics | - | 3 | -40°C | 125°C | 229 K |
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