| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N6382 | 8.00V; 100A ;1500W peak pulse power; glass passivated junction transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 139 K |
| 1N6383 | 10.00V; 90A ;1500W peak pulse power; glass passivated junction transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 139 K |
| 1N6384 | 12.00V; 70A ;1500W peak pulse power; glass passivated junction transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 139 K |
| 1N6385 | 15.00V; 60A ;1500W peak pulse power; glass passivated junction transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 139 K |
| 2N6386 | 40 V, darlington NPN silicon power transistor | distributor | - | 3 | -65°C | 150°C | 167 K |
| 2N6387 | 60 V, darlington NPN silicon power transistor | distributor | - | 3 | -65°C | 150°C | 167 K |
| 2N6387 | Silicon power darlington transistor | distributor | - | 3 | -65°C | 150°C | 160 K |
| 2N6388 | 80 V, darlington NPN silicon power transistor | distributor | - | 3 | -65°C | 150°C | 167 K |
| 2N6388 | Silicon power darlington transistor | distributor | - | 3 | -65°C | 150°C | 160 K |
| H2N6388 | 10A NPN epitaxial planar transistor for general purpose amplifier and switching applications | distributor | TO220AB | 3 | - | - | 35 K |
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