| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N6517 | NPN silicon planar medium power transistor | Zetex-Semiconductor | - | 3 | -55°C | 200°C | 27 K |
| 2N6517 | NPN silicon planar medium power transistor | Zetex-Semiconductor | - | 3 | -55°C | 200°C | 27 K |
| 2N6542 | 300 V, NPN silicon power transistor | distributor | - | 2 | -65°C | 200°C | 216 K |
| 2N6543 | 400 V, NPN silicon power transistor | distributor | - | 2 | -65°C | 200°C | 216 K |
| 2N6546 | 300 V, NPN silicon power transistor | distributor | - | 2 | -65°C | 200°C | 217 K |
| 2N6547 | 400 V, NPN silicon power transistor | distributor | - | 2 | -65°C | 200°C | 217 K |
| 2N6550 | N-Channel silicon junction field-effect transistor | distributor | - | 4 | - | - | 92 K |
| 2N6564 | 300 V, silicon controlled rectifier | distributor | - | 3 | - | - | 31 K |
| 2N6594 | 300 V, PNP silicon power transistor | distributor | - | 2 | -65°C | 200°C | 160 K |
| IRFB9N65A | HEXFET power MOSFET. VDSS = 650V, RDS(on) = 0.93 Ohm, ID = 8.5A | International-Rectifier | - | 3 | -55°C | 150°C | 102 K |
| IRFIB5N65A | HEXFET power MOSFET. VDSS = 650V, RDS(on) = 0.93 Ohm, ID = 5.1 A | International-Rectifier | - | 3 | -55°C | 150°C | 103 K |
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