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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2N6507Thyristor, 400V, 25AON-Semiconductor-3-40°C125°C50 K
2N6508Thyristor, 600V, 25AON-Semiconductor-3-40°C125°C50 K
2N6509Thyristor, 800V, 25AON-Semiconductor-3-40°C125°C50 K
2N6515High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.distributor-30°C150°C47 K
2N6516High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.distributor-30°C150°C69 K
2N6517High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW.distributor-30°C150°C47 K
2N6518High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W.distributor-30°C150°C50 K
2N6519High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W.distributor-30°C150°C50 K
2N6520High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W.distributor-30°C150°C109 K
TC54VN6502ECTTRVoltage detector, Nch open drain, 6.5V, +/-2%Microchip-Technology-Inc--5-40°C85°C215 K
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