Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2N6507 | Thyristor, 400V, 25A | ON-Semiconductor | - | 3 | -40°C | 125°C | 50 K |
2N6508 | Thyristor, 600V, 25A | ON-Semiconductor | - | 3 | -40°C | 125°C | 50 K |
2N6509 | Thyristor, 800V, 25A | ON-Semiconductor | - | 3 | -40°C | 125°C | 50 K |
2N6515 | High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 47 K |
2N6516 | High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 69 K |
2N6517 | High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 47 K |
2N6518 | High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. | distributor | - | 3 | 0°C | 150°C | 50 K |
2N6519 | High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. | distributor | - | 3 | 0°C | 150°C | 50 K |
2N6520 | High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. | distributor | - | 3 | 0°C | 150°C | 109 K |
TC54VN6502ECTTR | Voltage detector, Nch open drain, 6.5V, +/-2% | Microchip-Technology-Inc- | - | 5 | -40°C | 85°C | 215 K |
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