| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N6794 | 500V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO39 | - | - | - | 23 K |
| 2N6796 | N-channel enhancement mode MOSFET power transistor | distributor | - | 3 | -55°C | 125°C | 64 K |
| 2N6796 | 100V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO39 | - | - | - | 18 K |
| 2N6796LCC4 | 100V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | LCC4 | - | - | - | 19 K |
| 2N6798 | N-channel enhancement mode MOSFET power transistor | distributor | - | 3 | -55°C | 125°C | 64 K |
| 2N6798 | 200V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO39 | - | - | - | 21 K |
| JANTX2N6796 | N-channel enhancement mode MOSFET power transistor | distributor | - | 3 | -55°C | 125°C | 64 K |
| JANTX2N6798 | N-channel enhancement mode MOSFET power transistor | distributor | - | 3 | -55°C | 125°C | 64 K |
| JANTXV2N6798 | HEXFET power mosfet | International-Rectifier | - | 3 | -55°C | 150°C | 231 K |
| JANTXV2N6798 | N-channel enhancement mode MOSFET power transistor | distributor | - | 3 | -55°C | 125°C | 64 K |
| [1] 2 [3] |
|---|
