| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MGP21N80E | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 127 K |
| MTB4N80E1 | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 160 K |
| MTD1N80E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 269 K |
| MTP1N80E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 221 K |
| MTP4N80E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 159 K |
| MTW7N80E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 220 K |
| MTY16N80E | TMOS E-FET power field effect transistor | Motorola | - | 3 | -55°C | 150°C | 239 K |
| N80C42 | Universal peripheral interface CHMOS 8-bit slave microcontroller. 4K ROM | Intel-Corporation | PLCC | 44 | 0°C | 70°C | 345 K |
| N80L42 | Universal peripheral interface CHMOS 8-bit slave microcontroller. 4K ROM | Intel-Corporation | PLCC | 44 | 0°C | 70°C | 345 K |
| TN80C251TQ | High-performance CHMOS microcontroller. 512 bytes RAM, without ROM, 24 MHz | Intel-Corporation | PLCC | 44 | -40°C | 85°C | 238 K |
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