| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HN8050C | 25 V, NPN silicon expitaxial planar transistor | distributor | - | 3 | - | - | 319 K |
| HN8050D | 25 V, NPN silicon expitaxial planar transistor | distributor | - | 3 | - | - | 319 K |
| IXFK27N80Q | 800V HiPerFET power MOSFET Q-class | distributor | - | 3 | -55°C | 150°C | 55 K |
| IXFN27N80Q | 800V HiPerFET power MOSFET Q-class | distributor | - | 4 | -55°C | 150°C | 108 K |
| IXFN80N48 | 480V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 135 K |
| IXFR27N80Q | 800V HiPerFET power MOSFET Q-class | distributor | ISOPLUS247 | 3 | -55°C | 150°C | 55 K |
| IXFX27N80Q | 800V HiPerFET power MOSFET Q-class | distributor | ISOPLUS247 | 3 | -55°C | 150°C | 55 K |
| IXKC25N80C | 800V coolMOS power MOSFET | distributor | ISOPLUS220 | 3 | -55°C | 175°C | 1 M |
| IXSN80N60BD1 | 600V IGBT with diode | distributor | - | 4 | -55°C | 150°C | 62 K |
| STH8N80FI | Power dissipation 70 W Transistor polarity N Channel Current Id cont. 5.1 A Current Idm pulse 35 A Voltage isolation 4 kV Pitch lead 5.45 mm Voltage Vds max 800 V Resistance Rds on 1.2 R | SGS-Thomson-Microelectronics | - | - | - | - | 345 K |
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