| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| INA2132U | Dual, Low Power, Single-Supply Difference Amplifier | Burr-Brown-Corporation | 14 | - | -40°C | 85°C | 228 K |
| INA2132U/2K5 | Dual, Low Power, Single-Supply Difference Amplifier | Burr-Brown-Corporation | 14 | - | -40°C | 85°C | 228 K |
| INA2132UA | Dual, Low Power, Single-Supply Difference Amplifier | Burr-Brown-Corporation | 14 | - | -40°C | 85°C | 228 K |
| INA2132UA/2K5 | Dual, Low Power, Single-Supply Difference Amplifier | Burr-Brown-Corporation | 14 | - | -40°C | 85°C | 228 K |
| INA2141P | Dual, Low Power, G=10, 100 Instrumentation Amplifier | Burr-Brown-Corporation | 16 | - | -40°C | 85°C | 243 K |
| INA2141PA | Dual, Low Power, G=10, 100 Instrumentation Amplifier | Burr-Brown-Corporation | 16 | - | -40°C | 85°C | 243 K |
| INA2141U | Dual, Low Power, G=10, 100 Instrumentation Amplifier | Burr-Brown-Corporation | 16 | - | -40°C | 85°C | 243 K |
| INA2141UA | Dual, Low Power, G=10, 100 Instrumentation Amplifier | Burr-Brown-Corporation | 16 | - | -40°C | 85°C | 243 K |
| LNA2606L | GaAlAs on GaAs Infrared Light Emitting Diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 21 K |
| LNA2801L | GaAlAs on GaAs Infrared Light Emitting Diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 40 K |
| [1] [2] [3] 4 [5] [6] [7] [8] [9] |
|---|
