| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PNA4S11M | Bipolar Integrated Circuit with Photodetection Function | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 48 K |
| PNA4S12M | Bipolar Integrated Circuit with Photodetection Function | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 48 K |
| PNA4S13M | Bipolar Integrated Circuit with Photodetection Function | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 48 K |
| PNA4S14M | Bipolar Integrated Circuit with Photodetection Function | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 48 K |
| STD4NA40 | TRANSISTOR MOSFET D-PAK | SGS-Thomson-Microelectronics | - | - | - | - | 169 K |
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