| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FJNS3209R | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 33 K |
| FJNS3210R | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 32 K |
| FJNS3211R | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 26 K |
| FJNS3212R | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 26 K |
| FJNS3213R | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 27 K |
| FJNS3214R | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 28 K |
| FJNS3215R | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 36 K |
| NS32FX210V | Facsimile/data modem analog front end (AFE). | distributor | V28A | 28 | 0°C | 70°C | 763 K |
| NS32FX210V | Facsimile/data modem analog front end (AFE). | distributor | V28A | 28 | 0°C | 70°C | 763 K |
| VNS3NV04 | "OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 418 K |
| VNS3NV04D | "OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 241 K |
| [1] [2] 3 [4] |
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