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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
NTE5850Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.distributorDO42-65°C175°C24 K
NTE5852Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.distributorDO42-65°C175°C24 K
NTE5854Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.distributorDO42-65°C175°C24 K
NTE593Silicon diode, high speed switch. Repetitive peak reverse voltage 85V. Average rectified forward current 250mA.distributor-30°C150°C18 K
NTE593Silicon diode, high speed switch. Repetitive peak reverse voltage 85V. Average rectified forward current 250mA.distributor-30°C150°C18 K
NTE594Silicon diode, bandswitch. Continuous reverse voltage 35V. DC forward current 100mA.distributor-30°C125°C16 K
NTE595Silicon diode, dual, common cathode, high speed . Continuous reverse voltage 70V. DC forward current 250mA.distributor-30°C175°C19 K
NTE596Silicon diode, dual, common anode, high speed . Continuous reverse voltage 70V. DC forward current 250mA.distributor-30°C175°C19 K
NTE597Silicon rectifier, ultra fast. Peak repetitive reverse voltage 200V. Average rectified forward current 8A.distributorTO2202-65°C175°C18 K
NTE598Silicon rectifier, ultra fast. Peak repetitive reverse voltage 600V. Average rectified forward current 8A.distributorTO2202-65°C175°C18 K
NTE599Silicon rectifier, ultra fast. Peak repetitive reverse voltage 200V. Average rectified forward current 15A.distributorTO2202-65°C175°C18 K
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