| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| NTE5810 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1200V. Average forward current 12A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5871 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 12A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5872 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 12A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5873 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 12A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5874 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5876 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 12A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5878 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 12A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5880 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5882 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 12A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5890 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 12A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
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