| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HY6264LP-12 | 8K x 8-bit CMOS SRAM, 120ns | distributor | SOP | 28 | 0°C | 70°C | 578 K |
| HY6264LP-12 | 8K x 8-bit CMOS SRAM, 120ns | distributor | DIP | 28 | 0°C | 70°C | 578 K |
| KM41256AP-12 | 256K x 1-bit DRAM, 120ns | Samsung-Electronic | DIP | 16 | 0°C | 70°C | 988 K |
| KM6264BLP-12 | 8K x 8 bit CMOS static RAM, 120ns, low power | Samsung-Electronic | DIP | 28 | 0°C | 70°C | 152 K |
| KM6264BLP-12L | 8K x 8 bit CMOS static RAM, 120ns, low low power | Samsung-Electronic | DIP | 28 | 0°C | 70°C | 152 K |
| LBP-122 | Photo IC photointerrupter | distributor | - | 5 | -25°C | 85°C | 157 K |
| M5M27C202P-12 | 131072-word by 16-bit CMOS erasable and electrically reprogrammable ROM, 120ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 40 | -10°C | 80°C | 586 K |
| M5M27C202VP-12 | 131072-word by 16-bit CMOS erasable and electrically reprogrammable ROM, 120ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 40 | -10°C | 80°C | 586 K |
| M5M5256CFP-12VLL | 262144-bit (32768 x 8-bit) CMOS static RAM, 120ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOP | 28 | 0°C | 70°C | 472 K |
| M5M5256CFP-12VXL | 262144-bit (32768 x 8-bit) CMOS static RAM, 120ns | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOP | 28 | 0°C | 70°C | 472 K |
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