| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HM621400HLJP-12 | 4M high speed SRAM (4-Mword x 1-bit), 12ns access time | distributor | plastic SOJ | 32 | 0°C | 70°C | 73 K |
| HM624100HJP-12 | 4M high speed SRAM (1-Mword x 4-bit), 12ns access time | distributor | plastic SOJ | 32 | 0°C | 70°C | 74 K |
| HM624100HLJP-12 | 4M high speed SRAM (1-Mword x 4-bit), 12ns access time | distributor | plastic SOJ | 32 | 0°C | 70°C | 74 K |
| M5M29FB800VP-12 | CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -40°C | 85°C | 151 K |
| M5M29FT800FP-12 | CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOP | 44 | -40°C | 85°C | 151 K |
| M5M29FT800VP-12 | CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -40°C | 85°C | 151 K |
| M5M4V4S40CTP-12 | 4M (2-bank x 131072-word x 16-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 50 | 0°C | 70°C | 1 M |
| M5M51016BTP-12VLL-I | 1048576-bit (65536-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 44 | 0°C | 70°C | 75 K |
| M5M532R16JTP-12 | 524288-bit CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOJ | 44 | 0°C | 70°C | 74 K |
| M5M5V32R16JTP-12 | 16-bit static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOJ | 44 | 0°C | 70°C | 74 K |
| [1] [2] [3] [4] [5] 6 [7] [8] [9] [10] |
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