Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AS8S128K32P-35/883C | 128K x 32 SRAM memory array | distributor | PGA | 66 | -55°C | 125°C | 243 K |
AS8S128K32P-35/IT | 128K x 32 SRAM memory array | distributor | PGA | 66 | -40°C | 85°C | 243 K |
AS8S512K32P-35L/883C | 512K x 32 SRAM memory array | distributor | PGA | 66 | -55°C | 125°C | 223 K |
AS8S512K32P-35L/XT | 512K x 32 SRAM memory array | distributor | PGA | 66 | -55°C | 125°C | 223 K |
CAT28LV65P-35T | 350 ns 64K-bit CMOS parallel EEPROM | distributor | PDIP | 28 | 0°C | 70°C | 79 K |
LH543621P-35 | 1K x 36 x 2 synchronous bidirectional FIFO | Sharp | PQFP | 132 | 0°C | 70°C | 475 K |
MT5C1008JOP-35L/883C | 128K x 8 SRAM with dual chip enable | distributor | SOJ | 32 | -55°C | 125°C | 241 K |
MT5C1008JOP-35L/IT | 128K x 8 SRAM with dual chip enable | distributor | SOJ | 32 | -40°C | 85°C | 241 K |
MT5C1008JOP-35L/XT | 128K x 8 SRAM with dual chip enable | distributor | SOJ | 32 | -55°C | 125°C | 241 K |
OGP-35 | Overvoltage spark gap. Static breakdown voltage range (min-max) 8-42 kV. | distributor | - | - | -54°C | 100°C | 89 K |
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