| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BP103 | Silicon NPN phototransistor | Infineon-formely-Siemens | - | 3 | -40°C | 80°C | 331 K |
| BP103-2 | Silicon NPN phototransistor | Infineon-formely-Siemens | - | 3 | -40°C | 80°C | 331 K |
| BP103-3 | Silicon NPN phototransistor | Infineon-formely-Siemens | - | 3 | -40°C | 80°C | 331 K |
| BP103-4 | Silicon NPN phototransistor | Infineon-formely-Siemens | - | 3 | -40°C | 80°C | 331 K |
| RGP10B | 1.0 Ampere Glass Passivated Fast Recovery Rectifiers | Fairchild-Semiconductor | - | - | - | - | 35 K |
| RGP10D | 1.0 Ampere Glass Passivated Fast Recovery Rectifiers | Fairchild-Semiconductor | - | - | - | - | 35 K |
| RGP10G | 1.0 Ampere Glass Passivated Fast Recovery Rectifiers | Fairchild-Semiconductor | - | - | - | - | 35 K |
| RGP10J | 1.0 Ampere Glass Passivated Fast Recovery Rectifiers | Fairchild-Semiconductor | - | - | - | - | 35 K |
| RGP10K | 1.0 Ampere Glass Passivated Fast Recovery Rectifiers | Fairchild-Semiconductor | - | - | - | - | 35 K |
| RGP10M | 1.0 Ampere Glass Passivated Fast Recovery Rectifiers | Fairchild-Semiconductor | - | - | - | - | 35 K |
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