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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
GP10NGlass Passivated Junction RectifierGeneral-Semiconductor----61 K
HGTP10N120BN35A, 1200V, NPT Series N-Channel IGBTIntersil-Corporation----81 K
HGTP10N40E1D10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast DiodesIntersil-Corporation----37 K
HGTP10N40F1D10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast DiodesIntersil-Corporation----34 K
HGTP10N50C1D10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast DiodesIntersil-Corporation----37 K
HGTP10N50E1D10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast DiodesIntersil-Corporation----37 K
HGTP10N50F1D10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast DiodesIntersil-Corporation----34 K
KP10N14Transient surge suppressorsShindengen-Electric-Manufacturing-Company-Ltd-2F---263 K
MTP10N40ETMOS E-FET high energy power FETMotorola-4-65°C150°C249 K
MTP10N40ETMOS E-FET high energy power FETMotorola-4-65°C150°C249 K
SAP10NTransistor For Audio Amplifier With Temperature CompensationSanken-Electric-Co-----133 K
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