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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FQP10N20200V N-Channel MOSFETFairchild-Semiconductor----774 K
GP10N1100 V, 1 A sintered glass passivated junction rectifierdistributor-2-55°C150°C60 K
GP10N1100 V, 1 A sintered glass passivated junction rectifierdistributor-2-55°C150°C60 K
MTP10N10ETMOS IV power field effect transistorMotorola-4-65°C150°C237 K
MTP10N10ELLogic level TMOS E-FET power field effect transistorMotorola-4-55°C150°C221 K
MTP10N40ETMOS E-FET high energy power FETMotorola-4-65°C150°C249 K
MTP10N40ETMOS E-FET high energy power FETMotorola-4-65°C150°C249 K
PHP10N10E100 V, power MOS transistorPhilips-SemiconductorsTO3--56 K
PHP10N40400 V, power MOS transistorPhilips-SemiconductorsTO3-55°C150°C54 K
PHP10N40400 V, power MOS transistorPhilips-SemiconductorsTO3-55°C150°C54 K
PHP10N40E400 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C90 K
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