| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQP10N20 | 200V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 774 K |
| GP10N | 1100 V, 1 A sintered glass passivated junction rectifier | distributor | - | 2 | -55°C | 150°C | 60 K |
| GP10N | 1100 V, 1 A sintered glass passivated junction rectifier | distributor | - | 2 | -55°C | 150°C | 60 K |
| MTP10N10E | TMOS IV power field effect transistor | Motorola | - | 4 | -65°C | 150°C | 237 K |
| MTP10N10EL | Logic level TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 221 K |
| MTP10N40E | TMOS E-FET high energy power FET | Motorola | - | 4 | -65°C | 150°C | 249 K |
| MTP10N40E | TMOS E-FET high energy power FET | Motorola | - | 4 | -65°C | 150°C | 249 K |
| PHP10N10E | 100 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 56 K |
| PHP10N40 | 400 V, power MOS transistor | Philips-Semiconductors | TO | 3 | -55°C | 150°C | 54 K |
| PHP10N40 | 400 V, power MOS transistor | Philips-Semiconductors | TO | 3 | -55°C | 150°C | 54 K |
| PHP10N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 90 K |
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