Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
HGTP12N60A4 | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 115 K |
HGTP12N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 394 K |
HGTP12N60B3 | 27A, 600V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 112 K |
HGTP12N60B3D | 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 117 K |
HGTP12N60B3D | 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 117 K |
HGTP12N60C3 | 24A, 600V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 119 K |
HGTP12N60C3D | 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes | Intersil-Corporation | - | - | - | - | 99 K |
HGTP12N60D1 | 12A, 600V N-Channel IGBT | Intersil-Corporation | - | - | - | - | 31 K |
RFP12N06RLE | 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs | Intersil-Corporation | - | - | - | - | 49 K |
RFP12N10L | 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 38 K |
[1] [2] [3] 4 [5] [6] [7] [8] [9] [10] |
---|