Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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OP123 | GaAs hermetic infrared emitting diode | distributor | - | - | -65°C | 125°C | 255 K |
OP124 | GaAs hermetic infrared emitting diode | distributor | - | - | -65°C | 125°C | 255 K |
P121 | 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 8 | -65°C | 150°C | 32 K |
P122 | 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor | distributor | SO | 6 | -65°C | 150°C | 43 K |
TIP120 | 60 V, NPN plastic power transistor | distributor | - | 3 | -65°C | 150°C | 28 K |
TIP121 | 80 V, NPN plastic power transistor | distributor | - | 3 | -65°C | 150°C | 28 K |
TIP122 | 100 V, NPN plastic power transistor | distributor | - | 3 | -65°C | 150°C | 28 K |
TIP125 | 60 V, PNP plastic power transistor | distributor | - | 3 | -65°C | 150°C | 28 K |
TIP126 | 80 V, PNP plastic power transistor | distributor | - | 3 | -65°C | 150°C | 28 K |
TIP127 | 100 V, PNP plastic power transistor | distributor | - | 3 | -65°C | 150°C | 28 K |
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