| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 5KP12A | GPP transient voltage suppressor(TVS) . 5000W peak power, 5.0W steady state. VBR=13.3V(min), VBR=14.7V(max) @IT=5.0mA. For bidirectional use C or CA suffix. | distributor | - | 2 | -55°C | 175°C | 970 K |
| MA4P1200 | High power PIN diode | M-A-COM---manufacturer-of-RF | SMQ | 2 | -65°C | 175°C | 311 K |
| MA4P1250 | Surface mount PIN diode | M-A-COM---manufacturer-of-RF | SMQ | - | -65°C | 175°C | 143 K |
| P123 | 2 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 8 | -65°C | 150°C | 38 K |
| P124 | 4 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 8 | -65°C | 150°C | 33 K |
| ZXT10P12DE6TA | 12 V PNP silicon low saturation switching transistor | Zetex-Semiconductor | SOT | 6 | -55°C | 150°C | 232 K |
| ZXT10P12DE6TA | 12 V PNP silicon low saturation switching transistor | Zetex-Semiconductor | SOT | 6 | -55°C | 150°C | 232 K |
| ZXT10P12DE6TC | 12 V PNP silicon low saturation switching transistor | Zetex-Semiconductor | SOT | 6 | -55°C | 150°C | 232 K |
| ZXT10P12DE6TC | 12 V PNP silicon low saturation switching transistor | Zetex-Semiconductor | SOT | 6 | -55°C | 150°C | 232 K |
| ZXT12P12DXTA | Dual 12 V PNP silicon low saturation switching transistor | Zetex-Semiconductor | MSOP | 8 | -55°C | 150°C | 258 K |
| ZXT12P12DXTA | Dual 12 V PNP silicon low saturation switching transistor | Zetex-Semiconductor | MSOP | 8 | -55°C | 150°C | 258 K |
| << [41] [42] [43] [44] [45] 46 [47] [48] [49] [50] [51] >> |
|---|
