| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BSP120 | N-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | SOT223 | 4 | 0°C | 150°C | 76 K |
| BSP122 | N-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | SOT223 | 4 | 0°C | 150°C | 58 K |
| BSP126 | N-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | SOT223 | 4 | 0°C | 150°C | 75 K |
| BSP127 | N-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | SOT223 | 4 | 0°C | 150°C | 58 K |
| BSP128 | N-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | SOT223 | 4 | 0°C | 150°C | 58 K |
| PHP125 | P-channel enhancement mode MOS transistor. | Philips-Semiconductors | SO | 8 | -65°C | 150°C | 106 K |
| PHP125 | P-channel enhancement mode MOS transistor. | Philips-Semiconductors | SO | 8 | -65°C | 150°C | 106 K |
| PHP125 | P-channel enhancement mode MOS transistor. | Philips-Semiconductors | SO | 8 | -65°C | 150°C | 106 K |
| PNP12N10E | PowerMOS transistor. Drain-source voltage 100 V. Drain current(DC) 14 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 72 K |
| PNP12N10E | PowerMOS transistor. Drain-source voltage 100 V. Drain current(DC) 14 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 72 K |
| STP12NM50FDFP | N-CHANNEL 500V 0.32 OHM 12A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 FDMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 649 K |
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