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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BSP120200 V, N-channel enhancement mode vertical D-MOS transistorPhilips-SemiconductorsSOT4--65 K
BSP120N-channel enhancement mode vertical D-MOS transistor.Philips-SemiconductorsSOT22340°C150°C76 K
NCP1205P2Single ended PWM controller featuring QR operation and soft frequency foldbackON-SemiconductorPDIP14-25°C125°C163 K
P1201Supply voltage:100Vdc; 70mW; CdS photoconductive cell: resin coating type. Standard type designed for general purpose, wide applicationdistributor-2-30°C60°C106 K
P1201-01Supply voltage:100Vdc; 70mW; CdS photoconductive cell: resin coating type. Standard type designed for general purpose, wide applicationdistributor-2-30°C60°C106 K
P1201-04100Vdc; 50mW; CdS photoconductive cell: standard type designed for general purpose, wide applicationdistributor-2-30°C50°C116 K
P1201-06100Vdc; 50mW; CdS photoconductive cell: standard type designed for general purpose, wide applicationdistributor-2-30°C50°C116 K
P1202-12100Vdc; 150mW; CdS photoconductive cell: resin coating type. Standard type designed to withstand high voltage and high powerdistributor-2-30°C50°C114 K
P1202-16200Vdc; 100mW; CdS photoconductive cell: resin coating type. Standard type designed to withstand high voltage and high powerdistributor-2-30°C50°C114 K
TIP120NPN Epitaxial Darlington TransistorFairchild-Semiconductor----45 K
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