| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BSP122 | N-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | SOT223 | 4 | 0°C | 150°C | 58 K |
| HTIP122 | 5V 5A NPN epiataxial planar transistor for use in general purpose amplifier and low-speed swithcing applications | distributor | - | 3 | - | - | 39 K |
| P122 | 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor | distributor | SO | 6 | -65°C | 150°C | 43 K |
| SN75DP122 | DisplayPort 1:2 Switch with Integrated TMDS Translator | Texas-Instruments | - | | - | - | 930 K |
| SN75DP122RTQR
| DisplayPort 1:2 Switch with Integrated TMDS Translator | Texas-Instruments | - | | - | - | 930 K |
| SN75DP122RTQRG4
| DisplayPort 1:2 Switch with Integrated TMDS Translator | Texas-Instruments | - | | - | - | 930 K |
| SN75DP122RTQT
| DisplayPort 1:2 Switch with Integrated TMDS Translator | Texas-Instruments | - | | - | - | 930 K |
| SN75DP122RTQTG4 | DisplayPort 1:2 Switch with Integrated TMDS Translator | Texas-Instruments | - | | - | - | 930 K |
| TIP122 | NPN Epitaxial Darlington Transistor | Fairchild-Semiconductor | - | - | - | - | 45 K |
| TIP122 | NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. | distributor | - | 3 | -65°C | 150°C | 47 K |
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