| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IXGP12N100 | 1000V IGBT | distributor | - | 4 | -55°C | 150°C | 51 K |
| IXGP12N100A | 1000V IGBT | distributor | - | 4 | -55°C | 150°C | 51 K |
| IXGP12N100AU1 | 1000V IGBT | distributor | - | 4 | -55°C | 150°C | 116 K |
| IXGP12N100U1 | 1000V IGBT | distributor | - | 4 | -55°C | 150°C | 116 K |
| MTP12N10E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 170°C | 239 K |
| PHP12N10E | 100 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 57 K |
| PHP12N10E | PowerMOS transistor | Philips-Semiconductors | SOT78 | - | - | - | 72 K |
| PNP12N10E | PowerMOS transistor. Drain-source voltage 100 V. Drain current(DC) 14 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 72 K |
| PNP12N10E | PowerMOS transistor. Drain-source voltage 100 V. Drain current(DC) 14 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 72 K |
| RFP12N10 | 12.0A, 80V and 100V, 0.200 ohm, N-Channel Power MOSFET FN1386.2 | Intersil-Corporation | - | - | - | - | 43 K |
| RFP12N10L | 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 38 K |
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