| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 3KP13A | 13.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 590 K |
| 5KP130 | 130.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 647 K |
| 5KP130A | 130.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 647 K |
| 5KP13A | 13.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 647 K |
| FQP13N06 | 60V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 664 K |
| FQP13N06L | 60V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 659 K |
| FQP13N10 | 100V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 618 K |
| FQP13N10L | 100V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 554 K |
| PHP13N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 104 K |
| VI-P13X-XXX | InputV:24V; outputV:24V; 100-400W; 20-80A; single, dual and triple output DC-DC converter to applications that might otherwise require a custom supply | distributor | - | - | - | - | 154 K |
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