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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MAP140-1024Input voltage: 85-264V, output voltage 24/28V (4.6/4A), power supplierdistributor--0°C70°C575 K
MAP140-1048Input voltage: 85-264V, output voltage 48V (2.3A), power supplierdistributor--0°C70°C575 K
MAP140-3000PInput voltage: 85-264V, multiple output voltage, power supplierdistributor--0°C70°C575 K
TIP140NPN epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage 60V. Collector-emitter voltage 60V. Emitter-base voltage 5VWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--24 K
TIP140T60V 10A darlington coplementary silicon power transistordistributor-4-55°C150°C204 K
TIP141NPN epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage 80V. Collector-emitter voltage 80V. Emitter-base voltage 5VWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--24 K
TIP142NPN epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage 100V. Collector-emitter voltage 100V. Emitter-base voltage 5VWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--24 K
TIP145PNP epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage -60V. Collector-emitter voltage -60V. Emitter-base voltage -5VWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--26 K
TIP146PNP epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage -80V. Collector-emitter voltage -80V. Emitter-base voltage -5VWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--26 K
TIP147PNP epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage -100V. Collector-emitter voltage -100V. Emitter-base voltage -5VWing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--26 K
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