| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IXGP15N100C | 1000V IGBT | distributor | - | 3 | -55°C | 150°C | 51 K |
| IXGP15N120B | 1200V HiPerFAST IGBT | distributor | - | 3 | -55°C | 150°C | 51 K |
| IXGP15N120C | 1200V IGBT | distributor | - | 3 | -55°C | 150°C | 51 K |
| IXSP15N120B | 1200V high voltage IGBT | distributor | - | 3 | -55°C | 150°C | 84 K |
| MGP15N60U | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 120 K |
| MTP15N06V | TMOS V power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 163 K |
| MTP15N06VL | TMOS V power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 216 K |
| MTP15N06VL | TMOS V power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 216 K |
| PHP15N06E | 60 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 54 K |
| RFP15N05L | 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 354 K |
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