| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTP1N120BN | 5.3A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 71 K |
| HGTP1N120BND | 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 75 K |
| HGTP1N120CN | 6.2A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 77 K |
| HGTP1N120CND | 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 80 K |
| MTP1N100E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 203 K |
| MTP1N50E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 159 K |
| MTP1N60E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 232 K |
| MTP1N80E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 221 K |
| RLP1N06CLE | 1A, 55V, 0.750 Ohm,Voltage Clamping, Current Limited, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 47 K |
| RLP1N08LE | 1A, 80V, 0.750 Ohm, Current Limited, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 53 K |
| 1 [2] [3] [4] |
|---|
