| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFP23N50L | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.190 Ohm, ID = 23A, Trr = 170ns. | International-Rectifier | - | 3 | -55°C | 150°C | 104 K |
| OP231 | GaAs hermetic infrared emitting diode | distributor | - | 2 | -65°C | 125°C | 237 K |
| OP231W | GaAs hermetic infrared emitting diode | distributor | - | 2 | -65°C | 125°C | 317 K |
| OP232 | GaAs hermetic infrared emitting diode | distributor | - | 2 | -65°C | 125°C | 237 K |
| OP232W | GaAs hermetic infrared emitting diode | distributor | - | 2 | -65°C | 125°C | 317 K |
| OP233 | GaAs hermetic infrared emitting diode | distributor | - | 2 | -65°C | 125°C | 237 K |
| OP233W | GaAs hermetic infrared emitting diode | distributor | - | 2 | -65°C | 125°C | 317 K |
| PD65P23LA | 65 W DC/DC open frame/case with 10-30 V input, 5/12 V/6/3 A output | distributor | - | 8 | 0°C | 70°C | 78 K |
| PD65P23MA | 65 W DC/DC open frame/case with 20-60 V input, 5/12 V/6/3 A output | distributor | - | 8 | 0°C | 70°C | 78 K |
| RMWP23001 | 21-24 GHz power amplifier MMIC | distributor | - | - | -30°C | 85°C | 370 K |
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