Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
BZW04P256 | Working peak reverse voltage: 256 V, 1.0 mA, 400 Wtransient voltage suppressor | distributor | - | 2 | -65°C | 175°C | 51 K |
CP2500 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 50V. Max average forward current for resistive load at Tc=55degC 25A. | distributor | - | 4 | -55°C | 150°C | 68 K |
CP2501 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward current for resistive load at Tc=55degC 25A. | distributor | - | 4 | -55°C | 150°C | 68 K |
MCP2510-I/P | Bits number of 8 Microprocessor/controller features V2.0 spec, 1Mb/s bit rate, Serial Interface, Low Power Frequency clock 5 MHz Stand Alone Full CAN Controller P | Microchip-Technology-Inc- | DIL | 18 | - | - | 1 M |
TP2522N8 | 200V P-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 456 K |
TP2522ND | 200V P-channel enhancement-mode vertical DMOS FET | distributor | Die | 3 | -55°C | 150°C | 456 K |
TP2535N3 | 350V P-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 481 K |
TP2540N3 | 350V P-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 481 K |
TP2540N8 | 350V P-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 481 K |
TP2540ND | 350V P-channel enhancement-mode vertical DMOS FET | distributor | Die | 3 | -55°C | 150°C | 481 K |
<< [18] [19] [20] [21] [22] 23 [24] [25] [26] [27] [28] >> |
---|