| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AEP25112 | EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: a contact.. | distributor | - | 12 | -40°C | 80°C | 234 K |
| AEP25124 | EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: a contact.. | distributor | - | 12 | -40°C | 80°C | 234 K |
| AEP25312 | EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: b contact. | distributor | - | 12 | -40°C | 80°C | 234 K |
| AEP25324 | EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: b contact. | distributor | - | 12 | -40°C | 80°C | 234 K |
| BSP255 | 300 V, P-channel enhancement mode vertical D-MOS transistor | Philips-Semiconductors | SOT | 4 | -65°C | 150°C | 65 K |
| IRFP250 | N-channel power MOSFET, 200V, 30A | Samsung-Electronic | - | 3 | -55°C | 150°C | 518 K |
| IRFP251 | N-channel power MOSFET, 150V, 30A | Samsung-Electronic | - | 3 | -55°C | 150°C | 518 K |
| IRFP252 | N-channel power MOSFET, 200V, 25A | Samsung-Electronic | - | 3 | -55°C | 150°C | 518 K |
| IRFP253 | N-channel NEXFET, 150V, 27A | International-Rectifier | - | 3 | -55°C | 160°C | 493 K |
| IRFP253 | N-channel power MOSFET, 150V, 25A | Samsung-Electronic | - | 3 | -55°C | 150°C | 518 K |
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