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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
ADN2850ACP25-RL70.3-7V; nonvolatile memory, dual 1024 position programmable resistorsAnalog-Devices-16-40°C85°C270 K
ADN2850ACP2500.3-7V; nonvolatile memory, dual 1024 position programmable resistorsAnalog-Devices-16-40°C85°C270 K
ADN2850ACP250-RL70.3-7V; nonvolatile memory, dual 1024 position programmable resistorsAnalog-Devices-16-40°C85°C270 K
CY37256VP256-100BBC3.3V, ISR high-performance CPLDs, 256 macrocells, 100MHzCypress-SemiconductorBGA2560°C70°C1 M
CY37256VP256-100BGC3.3V, ISR high-performance CPLDs, 256 macrocells, 100MHzCypress-SemiconductorBGA2560°C70°C1 M
CY37256VP256-66BBI3.3V, ISR high-performance CPLDs, 256 macrocells, 66MHzCypress-SemiconductorFBGA256-40°C85°C1 M
CY37256VP256-66BGC3.3V, ISR high-performance CPLDs, 256 macrocells, 66MHzCypress-SemiconductorBGA2560°C70°C1 M
CY37256VP256-66BGI3.3V, ISR high-performance CPLDs, 256 macrocells, 66MHzCypress-SemiconductorBGA256-40°C85°C1 M
CY37384VP256-83BGC3.3V, ISR high-performance CPLDs, 384 macrocells, 83MHzCypress-SemiconductorBGA2560°C70°C1 M
IRFP250B200V N-Channel MOSFETFairchild-Semiconductor----669 K
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